characteristics (at 25 c) note: anode characteristics are measured with a voltage distribution ratio and supply voltage shown below. voltage dlstrlbutlon ratlo and supply voltage general maximum ratings (absolute maximum values) information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?013 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. specifications photomultiplier tube R8520-406 features applications parameter min. unit cathode sensitivity anode sensitivity anode dark current (after 30 minute storage in darkness) time response pulse linearity ( 2 % deviation) luminous (2856 k) blue sensitivity index (cs 5-58) radiant at 420 nm quantum efficiency at 175 nm luminous (2856 k) gain ( 10 6 ) anode pulse rise time electron transit time transit time spread (fwhm) 80 9.0 40 100 11.0 100 30 100 1 2 1.8 12.4 0.8 30 ma/lm ma/w % a/w na ns ns ns ma 20 typ. max. parameter unit spectral response wavelength of maximum response window material photocathode dynode operating ambient temperature storage temperature weight materiai minimum effective area structure number of stages 160 to 650 420 synthetic silica bialkali 20.5 20.5 metal channel 10 -110 to +50 -110 to +50 22.9 nm nm mm 2 c c g description / value parameter unit supply voltage average anode current between anode and cathode between anode and last dynode 900 150 0.1 v v ma value electrodes k dy1 g dy2 dy3 dy4 dy5 dy6 dy7 dy8 p ratio 0.5 1.5 2 1 1 1 1 1 1 dy9 1 dy10 1 0.5 suppiy voltage: 800 v, k: cathode, g: grid, dy: dynode, p: anode high energy physics academic research for low temperature operation down to -110 c low radioactivity 26 mm (1 inch) square high uv sensitivity by synthetic silica window
figure 1: typical spectral response figure 2: typical gain tpmh1342e01 nov. 2013 ip figure 3: dimensional outline (unit: mm) tpmha0575ea photomultiplier tube R8520-406 hamamatsu photonics k.k. hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 u.s.a.: hamamatsu corporation: 360 foothill road, p. o. box 6910, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fa x: (1)908-231-1218 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, f ax: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road welwyn garden city hertfordshire al7 1bw, united kingdom, teleph one: 44-(0)1707-294888, fax: 44(0)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: thorshamnsgatan 35 se-164 40 kista, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e-mail: info@hamamatsu.se italy: hamamatsu photonics italia: s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39)02-935 81 733, fax: (39)02-935 81 741 e-mail: info@hamamatsu.it china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, 27 dongsanhuan road north, chaoyang district, beijing 100 020, china, telephone: (86)10-6586-6006, fax: (86)10-6586-2866 e-mail: hpc@hamamatsu.com.cn www.hamamatsu.com basing diagram k g dy p cut ic : photocathode : grid : dynode : anode : cut pin : internal connection (don't use) cut (dy10) cut (dy10) p cut (dy10) cut (dy10) cut (ic) cut (ic) 123456789 23 10 22 21 11 25 24 20 12 19 18 17 16 15 14 13 g cut (dy10) k dy1 dy2 dy3 dy4 cut (dy10) cut (g) cut (g) dy10 dy9 dy8 dy7 dy6 dy5 cut (dy10) cut (g) 2.54 pitch 8 2.54=20.32 10.16 5.08 20.32 15.24 guide mark 45 10 25- 1.5 useful area 28.25 1.00 7.0 0.5 1.2 5 max. 13- 0.45 5 max. 1.2 max. 2.5 max. 24 synthetic silica al ring ni plating photocathode 4-r3.2 side view bottom view top view 20.5 min. 25.7 0.4 100 0.001 0.01 0.1 1 10 100 200 300 400 500 wavelength (nm) quantum efficiency (%) 600 700 800 500 1 10 4 1 10 5 1 10 6 1 10 7 600 supply voltage (v) gain 800 900 700 tpmhb0882e01 tpmhb0883e01
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